منابع مشابه
Tantalum silicide Schottky contacts to GaAs
Tantalum silicide (TaSix ) films with different Si to Ta ratios (x) as Schottky contacts to GaAs have been studied. The films were prepared by coevaporation. The metallurgical properties of the film and the stability of the silicide-GaAs interface were studied by x-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy. The films were annealed at various temper...
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We report the current-voltage behavior for nanoscale point contacts to Si(111) obtained in ultrahigh vacuum using scanning tunneling microscopy. Epitaxial CoSi(2) islands provide single-crystal contacts with well-defined size and shape. The zero bias conductance is found to be independent of the island size (10(2)-10(4) nm(2)) and shape, but varies strongly with the surface Fermi level position...
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For carbon nanotube transistors, as for graphene, the electrical contacts are a key factor limiting device performance. We calculate the device characteristics as a function of nanotube diameter and metal work function. Although the on-state current varies continuously, the transfer characteristics reveal a relatively abrupt crossover from Schottky to Ohmic contacts. We find that typical high-p...
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We report on titanium contacts to n-type and p-type Si1ÿxÿyGexCy strained heteroepitaxial layers on (100)Si and material and electrical characterization of n-type and p-type platinum±silicide±germanide contacts to Si1ÿxÿyGexCy strained heteroepitaxial layers on (100)Si. Ti contacts to n-type Si1ÿxÿyGexCy show rectifying behavior at low doping levels but become ohmic as layers reach 10 cmÿ3. Ti ...
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We have demonstrated Schottky diodes using semiconducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse bias breakdown voltages of greater than -15 V. To decrease the...
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ژورنال
عنوان ژورنال: APL Materials
سال: 2014
ISSN: 2166-532X
DOI: 10.1063/1.4870536